Kim Jeong-ho, a professor at the Korea Advanced Institute of Science and Technology (KAIST) in the Department of Electrical and Electronics Engineering, and Lee Gang-wook, vice president of SK hynix, have been selected as recipients of the '2025 Gang Dae-won Award.' Both individuals have been recognized for their contributions to HBM development.
The executive committee of the Korean Semiconductor Conference announced on the 12th that Professor Kim and Vice President Lee have been selected as recipients of the '2025 Gang Dae-won Award' at the opening ceremony of the 32nd Korean Semiconductor Conference, set to take place on the afternoon of the 13th at the High One Grand Hotel in Gangwon Province.
The Gang Dae-won Award was established to honor the late Dr. Gang Dae-won, who developed the world's first MOSFET and floating gate, paving the way for advancements in semiconductor technology. The executive committee has been recognizing and awarding promising talents succeeding Dr. Gang since the 24th Semiconductor Conference held in 2017.
Professor Kim is a leading authority in artificial intelligence semiconductors, known as the 'father of HBM.' He has led the world in HBM-related design technologies for over 20 years. In particular, he has been recognized globally for his innovative research in areas such as HBM through-silicon via (TSV), interposers, signal line design (SI), and power line design (PI).
Recently, he has been actively researching next-generation HBM architectures, including HBM4, HBM5, and HBM6, the 6th generation of HBM. In June of last year, he worked with Samsung Electronics to establish the 'Graduate School of System Architectures' at KAIST, focusing on nurturing advanced professional talent.
As a Fellow of the Institute of Electrical and Electronics Engineers (IEEE), Professor Kim has received numerous accolades, including the KAIST Academic Award, the KAIST Research Award, the KAIST International Cooperation Award, and the IEEE Technical Achievement Award for his contributions to the development of the industry through semiconductor research and education. He has achieved significant academic success, receiving 'Best Paper Awards' at over 20 international conferences, including IEEE.
Vice President Lee is a top technical expert in the semiconductor packaging field. During the development of the HBM2E, the third-generation HBM product in 2019, he successfully introduced innovative packaging technology, helping SK hynix gain a competitive edge in the HBM market and play a crucial role in becoming a global leader in AI memory.