The landscape of Samsung Electronics' Hwaseong plant./Courtesy of Samsung Electronics

Samsung Electronics is struggling in the high-bandwidth memory (HBM) market, while the next-generation DRAM, 10nm-level sixth-generation (1c, 11-12nm level) DRAM process yield for HBM4 (sixth-generation HBM) stacked in 12 layers is stabilizing rapidly. As competitors like SK hynix and Micron have proactively supplied samples of HBM4 12-layer products to NVIDIA, a major player in the HBM market, Samsung Electronics is expected to accelerate the supply and mass production of HBM4 samples.

Advanced 10nm DRAM applies finer processes through successive generations, narrowing the circuit linewidth of the DRAM. This reduces the size of the chips and increases integration to improve performance and power efficiency. Currently, Samsung Electronics, SK hynix, and Micron are competing in the market with 10nm fourth-generation (1a, 14nm level) and 10nm fifth-generation (1b, 12-13nm level) DRAM as their main products, with plans to begin mass production of 1c DRAM in the second half of the year.

According to industry sources on the 17th, the process yield of Samsung Electronics' 1c DRAM has reportedly surpassed 50%. As 1c DRAM has entered the mass production stage, yield is expected to rise further. A semiconductor industry official noted, "Once the initial yield stabilizes in DRAM, the speed at which yield increases during mass production is extremely fast," adding, "Whether it can record superior performance compared to competitors is crucial."

The HBM4, which is produced through the mass production of general-purpose 1c DRAM and 1c processes, is anticipated to become the largest battleground in the memory semiconductor market this second half. Currently, HBM3E (fifth-generation HBM) products in 8-layer and 12-layer configurations shipped to the market are led by SK hynix, with Micron quickly following. Although Samsung Electronics supplied HBM3E products to AMD, it suffered a setback for failing to pass the sample tests conducted by NVIDIA, which holds 90% of the AI semiconductor market.

Samsung Electronics is losing competitiveness in the general-purpose DRAM market, where it once reigned supreme. Evaluations have started indicating that its performance has lagged behind SK hynix's from the 10nm fourth-generation (1a) DRAM. In response, Samsung Electronics is making bold moves to narrow the gap by redesigning the 1c DRAM, dedicating full efforts to recover its competitiveness.

Samsung Electronics plans to retaliate in the memory semiconductor market starting with the supply of HBM4 samples in the second half. Particularly, it aims to proactively respond to the emerging "customized HBM" market that will blossom starting with HBM4. HBM4 will apply foundry processes to the logic die, which serves as the chip's brain, significantly enhancing chip performance and enabling design optimization for the desired applications of customers. As Samsung Electronics has internalized advanced foundry processes, it intends to respond flexibly to market needs. Currently, Samsung Electronics' foundry division is mass-producing logic dies through a 4nm process. SK hynix and Micron manufacture these through TSMC.

A semiconductor industry official stated, "Samsung Electronics proactively mass-produced logic dies through a foundry 4nm process to recover competitiveness in the HBM4 market," adding, "The stabilization of yield and performance for logic dies is encouraging, as it indicates that the yield for the 'core die' 1c DRAM stacked in HBM has stabilized. Although the development stage has lagged behind those of SK hynix and Micron, there will be opportunities in the HBM market if performance satisfies customers."

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